RU80190R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU80190R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 190 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm

Encapsulados: TO-220

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RU80190R datasheet

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RU80190R

RU80190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 80V/190A, RDS (ON) =3.1m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inv

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RU80190R

RU80100R N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications High Current Switching Applicati

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RU80190R

RU80100S N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V D Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G S TO263 D Applications High Current Switching Applications

Otros transistores... RU7550S, RU7570L, RU7580R, RU7582S, RU7590R, RU7H2K, RU80100R, RU80100S, 4N60, RU8080R, RU8080S, RU8099R, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6