RU80190R Datasheet and Replacement
Type Designator: RU80190R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 940 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-220
RU80190R substitution
RU80190R Datasheet (PDF)
ru80190r.pdf

RU80190RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 80V/190A,RDS (ON) =3.1m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application Systems Inv
ru80100r.pdf

RU80100R N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green Available Applications High Current Switching Applicati
ru80100s.pdf

RU80100SN-Channel Advanced Power MOSFETFeatures Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10VD Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableGSTO263DApplications High Current Switching Applications
Datasheet: RU7550S , RU7570L , RU7580R , RU7582S , RU7590R , RU7H2K , RU80100R , RU80100S , 2SK3568 , RU8080R , RU8080S , RU8099R , RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 .
History: TMAN11N90Z | SED14N65G
Keywords - RU80190R MOSFET datasheet
RU80190R cross reference
RU80190R equivalent finder
RU80190R lookup
RU80190R substitution
RU80190R replacement
History: TMAN11N90Z | SED14N65G



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