RU80190R Datasheet. Specs and Replacement

Type Designator: RU80190R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 940 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220

RU80190R substitution

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RU80190R datasheet

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RU80190R

RU80190R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 80V/190A, RDS (ON) =3.1m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems Inv... See More ⇒

 9.1. Size:336K  ruichips
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RU80190R

RU80100R N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications High Current Switching Applicati... See More ⇒

 9.2. Size:323K  ruichips
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RU80190R

RU80100S N-Channel Advanced Power MOSFET Features Pin Description 80V/100A, RDS (ON) =5.5m (Typ.) @ VGS=10V D Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available G S TO263 D Applications High Current Switching Applications... See More ⇒

Detailed specifications: RU7550S, RU7570L, RU7580R, RU7582S, RU7590R, RU7H2K, RU80100R, RU80100S, 4N60, RU8080R, RU8080S, RU8099R, RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6

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