RUE003N02TL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUE003N02TL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: EMT3

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RUE003N02TL datasheet

 ..1. Size:921K  ruichips
 rue003n02tl.pdf pdf_icon

RUE003N02TL

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol QT 5) Parallel use is easy. Applications Switch

 5.1. Size:934K  rohm
 rue003n02.pdf pdf_icon

RUE003N02TL

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol QT 5) Parallel use is easy. Applications Switch

 9.1. Size:176K  rohm
 rue002n05.pdf pdf_icon

RUE003N02TL

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces)

 9.2. Size:216K  rohm
 rue002n02.pdf pdf_icon

RUE003N02TL

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

MOSTRAR MÁS

Otros transistores... RU80N15Q, RU80N15R, RU80N15S, RU80T4H, RU8205C6, RU8205G, RU8590R, RUE002N02TL, IRF2807, RUF015N02TL, RUF025N02TL, RUL035N02TR, RUM001L02, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA