RUE003N02TL Todos los transistores

 

RUE003N02TL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUE003N02TL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: EMT3
 

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RUE003N02TL Datasheet (PDF)

 ..1. Size:921K  ruichips
 rue003n02tl.pdf pdf_icon

RUE003N02TL

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

 5.1. Size:934K  rohm
 rue003n02.pdf pdf_icon

RUE003N02TL

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

 9.1. Size:176K  rohm
 rue002n05.pdf pdf_icon

RUE003N02TL

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3(SC-75A)Features1) High speed switing.2) Small package(EMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces)

 9.2. Size:216K  rohm
 rue002n02.pdf pdf_icon

RUE003N02TL

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

MOSTRAR MÁS

Otros transistores... RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R , RUE002N02TL , IRFB31N20D , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA .

History: IRF7241 | TPC6110 | FDMS86380-F085

 

 
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