All MOSFET. RUE003N02TL Datasheet

 

RUE003N02TL MOSFET. Datasheet pdf. Equivalent

Type Designator: RUE003N02TL

SMD Transistor Code: QT

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.15 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 0.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: EMT3

RUE003N02TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUE003N02TL Datasheet (PDF)

1.1. rue003n02.pdf Size:934K _rohm

RUE003N02TL
RUE003N02TL

1.8V Drive Nch MOSFET RUE003N02 ?Structure ?Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET ?Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol : QT 5) Parallel use is easy. ?Applications Switching ?Pack

1.2. rue003n02tl.pdf Size:921K _ruichips

RUE003N02TL
RUE003N02TL

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol : QT 5) Parallel use is easy. Applications Switch

 5.1. rue002n05.pdf Size:176K _rohm

RUE003N02TL
RUE003N02TL

1.2V Drive Nch MOSFET RUE002N05 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET EMT3 (SC-75A) ?Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol : RH ? Application Switching ? Packaging specifications ? Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 ?1 RUE0

5.2. rue002n02.pdf Size:216K _rohm

RUE003N02TL
RUE003N02TL

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Package

 5.3. rue002n02tl.pdf Size:215K _ruichips

RUE003N02TL
RUE003N02TL

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol : QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

Datasheet: RU80N15Q , RU80N15R , RU80N15S , RU80T4H , RU8205C6 , RU8205G , RU8590R , RUE002N02TL , IRFBC40 , RUF015N02TL , RUF025N02TL , RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA .

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