RUR040N02FRA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RUR040N02FRA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TSMT3

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RUR040N02FRA datasheet

 ..1. Size:950K  ruichips
 rur040n02fra.pdf pdf_icon

RUR040N02FRA

RUR040N02FRA RUR040N02 Transistors AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUR040N02 RUR040N02FRA Structure Dimensions (Unit mm) Silicon N-channel TSMT3 MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XF (3) Drain App

 5.1. Size:101K  rohm
 rur040n02.pdf pdf_icon

RUR040N02FRA

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit mm) Silicon N-channel TSMT3 MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XF (3) Drain Application Switching Equivalent circuit

 5.2. Size:99K  ruichips
 rur040n02tl.pdf pdf_icon

RUR040N02FRA

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit mm) Silicon N-channel TSMT3 MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XF (3) Drain Application Switching Equivalent circuit

 5.3. Size:915K  cn vbsemi
 rur040n02tl.pdf pdf_icon

RUR040N02FRA

RUR040N02TL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Co

MOSTRAR MÁS

Otros transistores... RUL035N02TR, RUM001L02, RUM002N02T2L, RUM002N05T2L, RUM003N02T2L, RUQ050N02FRA, RUQ050N02TR, RUR020N02TL, 7N60, RUR040N02TL, RUS100N02, PHB101NQ04T, PHB108NQ03LT, PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T