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RUR040N02FRA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RUR040N02FRA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TSMT3
 

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RUR040N02FRA Datasheet (PDF)

 ..1. Size:950K  ruichips
rur040n02fra.pdf pdf_icon

RUR040N02FRA

RUR040N02FRARUR040N02TransistorsAEC-Q101 Qualified1.5V Drive Nch MOSFETRUR040N02RUR040N02FRA Structure Dimensions (Unit : mm)Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain App

 5.1. Size:101K  rohm
rur040n02.pdf pdf_icon

RUR040N02FRA

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit : mm) Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain Application Switching Equivalent circuit

 5.2. Size:99K  ruichips
rur040n02tl.pdf pdf_icon

RUR040N02FRA

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit : mm) Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain Application Switching Equivalent circuit

 5.3. Size:915K  cn vbsemi
rur040n02tl.pdf pdf_icon

RUR040N02FRA

RUR040N02TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co

Otros transistores... RUL035N02TR , RUM001L02 , RUM002N02T2L , RUM002N05T2L , RUM003N02T2L , RUQ050N02FRA , RUQ050N02TR , RUR020N02TL , MMIS60R580P , RUR040N02TL , RUS100N02 , PHB101NQ04T , PHB108NQ03LT , PHB110NQ06LT , PHB110NQ08LT , PHB112N06T , PHB119NQ06T .

History: SFS06R06LGF | NCEP0260 | NP90N055MUK | G16P03S | SWD030R03VLT | SFS06R03BF | SIF2N60C

 

 
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