RUR040N02FRA Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RUR040N02FRA
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TSMT3
- подбор MOSFET транзистора по параметрам
RUR040N02FRA Datasheet (PDF)
rur040n02fra.pdf

RUR040N02FRARUR040N02TransistorsAEC-Q101 Qualified1.5V Drive Nch MOSFETRUR040N02RUR040N02FRA Structure Dimensions (Unit : mm)Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain App
rur040n02.pdf

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit : mm) Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain Application Switching Equivalent circuit
rur040n02tl.pdf

RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit : mm) Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain Application Switching Equivalent circuit
rur040n02tl.pdf

RUR040N02TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: AP4N4R2H | 2SJ542 | BSS138A | STF20NM60D | AONU32320 | YTF840
History: AP4N4R2H | 2SJ542 | BSS138A | STF20NM60D | AONU32320 | YTF840



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