PHB146NQ06LT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHB146NQ06LT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 95 nS

Cossⓘ - Capacitancia de salida: 755 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: D2PAK

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PHB146NQ06LT datasheet

 ..1. Size:86K  philips
 phb146nq06lt.pdf pdf_icon

PHB146NQ06LT

PHB146NQ06LT N-channel TrenchMOS logic level FET Rev. 01 10 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co

 9.1. Size:83K  philips
 phb145nq06t.pdf pdf_icon

PHB146NQ06LT

PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC converter

 9.2. Size:64K  philips
 phb14nq20t php14nq20t 1.pdf pdf_icon

PHB146NQ06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP14NQ20T, PHB14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching High thermal cycling performance ID = 14 A Low thermal resistance g RDS(ON) 230 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power

 9.3. Size:85K  philips
 phb143nq04t php143nq04t.pdf pdf_icon

PHB146NQ06LT

PHP/PHB143NQ04T N-channel TrenchMOS standard level FET Rev. 01 13 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

MOSTRAR MÁS

Otros transistores... PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T, PHB11N06LT, PHB129NQ04LT, PHB143NQ04T, PHB145NQ06T, AO4407A, PHB152NQ03LTA, PHB153NQ08LT, PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T