PHB146NQ06LT Datasheet. Specs and Replacement

Type Designator: PHB146NQ06LT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 95 nS

Cossⓘ - Output Capacitance: 755 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: D2PAK

PHB146NQ06LT substitution

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PHB146NQ06LT datasheet

 ..1. Size:86K  philips
 phb146nq06lt.pdf pdf_icon

PHB146NQ06LT

PHB146NQ06LT N-channel TrenchMOS logic level FET Rev. 01 10 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC co... See More ⇒

 9.1. Size:83K  philips
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PHB146NQ06LT

PHB145NQ06T N-channel TrenchMOS standard level FET Rev. 01 06 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC converter... See More ⇒

 9.2. Size:64K  philips
 phb14nq20t php14nq20t 1.pdf pdf_icon

PHB146NQ06LT

Philips Semiconductors Product specification TrenchMOS transistor PHP14NQ20T, PHB14NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching High thermal cycling performance ID = 14 A Low thermal resistance g RDS(ON) 230 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power... See More ⇒

 9.3. Size:85K  philips
 phb143nq04t php143nq04t.pdf pdf_icon

PHB146NQ06LT

PHP/PHB143NQ04T N-channel TrenchMOS standard level FET Rev. 01 13 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC ... See More ⇒

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Detailed specifications: PHB110NQ06LT, PHB110NQ08LT, PHB112N06T, PHB119NQ06T, PHB11N06LT, PHB129NQ04LT, PHB143NQ04T, PHB145NQ06T, AO4407A, PHB152NQ03LTA, PHB153NQ08LT, PHB160NQ08T, PHB174NQ04LT, PHB176NQ04T, PHB193NQ06T, PHB222NQ04LT, PHB225NQ04T

Keywords - PHB146NQ06LT MOSFET specs

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