PHD108NQ03LT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHD108NQ03LT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 102 nS
Cossⓘ - Capacitancia de salida: 580 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: DPAK
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PHD108NQ03LT Datasheet (PDF)
phb108nq03lt phd108nq03lt phu108nq03lt.pdf

PHB/PHD/PHU108NQ03LTN-channel TrenchMOS logic level FETRev. 03 18 April 2005 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge1.3 Applicati
phb108nq03lt phd108nq03lt php108nq03lt.pdf

PHP/PHB/PHD108NQ03LTTrenchMOS logic level FETRev. 02 11 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.Product availability:PHP108NQ03LT in SOT78 (TO-220AB)PHB108NQ03LT in SOT404 (D2-PAK)PHD108NQ03LT in SOT428 (D-PAK).1.2 Features Logic level compatibl
phd10n10e 1.pdf

Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope suuitable for VDS Drain-source voltage 100 Vsurface mounting. The device is ID Drain current (DC) 11 Aintended for use in Switched Mode Ptot Total power dissipation
phd101nq03lt.pdf

PHD101NQ03LTN-channel TrenchMOS logic level FETRev. 5 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Feature
Otros transistores... PHB225NQ04T , PHB23NQ10LT , PHB38N02LT , PHB4ND40E , PHB73N06T , PHB78NQ03LT , PHB95NQ04LT , PHB96NQ03LT , IRF1404 , PHD14NQ20T , PHD16N03LT , PHD16N03T , PHD18NQ10T , PHD21N06LT , PHD22NQ20T , PHD23NQ10T , PHD34NQ10T .
History: 2SK358 | SLF20N50C | SGSP462 | HM90N04D | AOT380A60L | HTO350N03 | IRFSL7540PBF
History: 2SK358 | SLF20N50C | SGSP462 | HM90N04D | AOT380A60L | HTO350N03 | IRFSL7540PBF



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