PHD108NQ03LT Datasheet. Specs and Replacement

Type Designator: PHD108NQ03LT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 102 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DPAK

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PHD108NQ03LT datasheet

 ..1. Size:94K  philips
 phb108nq03lt phd108nq03lt phu108nq03lt.pdf pdf_icon

PHD108NQ03LT

PHB/PHD/PHU108NQ03LT N-channel TrenchMOS logic level FET Rev. 03 18 April 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Very low on-state resistance Lead-free construction Low gate charge 1.3 Applicati... See More ⇒

 ..2. Size:253K  philips
 phb108nq03lt phd108nq03lt php108nq03lt.pdf pdf_icon

PHD108NQ03LT

PHP/PHB/PHD108NQ03LT TrenchMOS logic level FET Rev. 02 11 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PHP108NQ03LT in SOT78 (TO-220AB) PHB108NQ03LT in SOT404 (D2-PAK) PHD108NQ03LT in SOT428 (D-PAK). 1.2 Features Logic level compatibl... See More ⇒

 9.1. Size:60K  philips
 phd10n10e 1.pdf pdf_icon

PHD108NQ03LT

Philips Semiconductors Product Specification PowerMOS transistor PHD10N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suuitable for VDS Drain-source voltage 100 V surface mounting. The device is ID Drain current (DC) 11 A intended for use in Switched Mode Ptot Total power dissipation... See More ⇒

 9.2. Size:773K  nxp
 phd101nq03lt.pdf pdf_icon

PHD108NQ03LT

PHD101NQ03LT N-channel TrenchMOS logic level FET Rev. 5 31 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature... See More ⇒

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Detailed specifications: PHB225NQ04T, PHB23NQ10LT, PHB38N02LT, PHB4ND40E, PHB73N06T, PHB78NQ03LT, PHB95NQ04LT, PHB96NQ03LT, IRF640, PHD14NQ20T, PHD16N03LT, PHD16N03T, PHD18NQ10T, PHD21N06LT, PHD22NQ20T, PHD23NQ10T, PHD34NQ10T

Keywords - PHD108NQ03LT MOSFET specs

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