PHP112N06T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHP112N06T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 200 W
Tensión drenaje-fuente (Vds): 55 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 75 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Tiempo de elevación (tr): 94 nS
Conductancia de drenaje-sustrato (Cd): 720 pF
Resistencia drenaje-fuente RDS(on): 0.008 Ohm
Empaquetado / Estuche: TO-220AB
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PHP112N06T Datasheet (PDF)
1.1. phb112n06t php112n06t.pdf 
Size:262K _philips2
PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP112N06T in SOT78 (TO-220AB) PHB112N06T in SOT404 (D2-PAK). 2. Features Fast switching Very low on-state resistan
5.1. php11n50e phb11n50e phw11n50e.pdf Size:35K _philips2
Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 10.4 A g • Low thermal resistance RDS(ON) ≤ 0.6 Ω s GENERAL DESCRIPTI
5.2. phb11n06lt phd11n06lt php11n06lt 3.pdf Size:114K _philips2
Philips Semiconductors Product specification N-channel TrenchMOS? transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatible RDS(ON) ? 150 m? (VGS = 5 V) g RDS(ON) ? 130 m? (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancemen
5.3. php110nq08t phb110nq08t.pdf Size:89K _philips2
PHP/PHB110NQ08T N-channel TrenchMOS standard level FET Rev. 01 29 March 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC c
5.4. php110nq06lt.pdf Size:211K _philips2
PHP110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features
5.5. phb119nq06t php119nq06t.pdf Size:92K _philips2
PHP/PHB119NQ06T N-channel TrenchMOS™ standard level FET Rev. 01 — 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC
5.6. phb110nq08lt php110nq08lt.pdf Size:89K _philips2
PHP/PHB110NQ08LT N-channel TrenchMOS™ logic level FET Rev. 01 — 29 March 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features Logic level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies
5.7. php110nq06lt phb110nq06lt.pdf Size:94K _philips2
PHP/PHB110NQ06LT N-channel TrenchMOS logic level FET Rev. 01 04 May 2004 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold Low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC convert
5.8. php110nq08t.pdf Size:315K _philips2
PHP110NQ08T N-channel TrenchMOS standard level FET Rev. 02 — 12 October 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 F
5.9. php119nq06t phb119nq06t.pdf Size:94K _philips2
PHP/PHB119NQ06T N-channel TrenchMOS standard level FET Rev. 01 05 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Standard level threshold Very low on-state resistance. 1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC converter
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