All MOSFET. PHP112N06T Datasheet

 

PHP112N06T MOSFET. Datasheet pdf. Equivalent

Type Designator: PHP112N06T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 94 nS

Drain-Source Capacitance (Cd): 720 pF

Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm

Package: TO-220AB

PHP112N06T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PHP112N06T Datasheet (PDF)

0.1. phb112n06t php112n06t.pdf Size:262K _philips

PHP112N06T
PHP112N06T

PHP112N06T; PHB112N06TN-channel enhancement mode field-effect transistorRev. 01 07 March 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP112N06T in SOT78 (TO-220AB)PHB112N06T in SOT404 (D2-PAK).2. Features Fast switching Very low on-state resistan

9.1. phb11n06lt phd11n06lt php11n06lt 3.pdf Size:114K _philips

PHP112N06T
PHP112N06T

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP11N06LT, PHB11N06LT Logic level FET PHD11N06LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Low on-state resistance Fast switching ID = 10.5 A Logic level compatibleRDS(ON) 150 m (VGS = 5 V)gRDS(ON) 130 m (VGS = 10 V)sGENERAL DESCRIPT

9.2. php119nq06t phb119nq06t.pdf Size:94K _philips

PHP112N06T
PHP112N06T

PHP/PHB119NQ06TN-channel TrenchMOS standard level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

 9.3. phb110nq08lt php110nq08lt.pdf Size:89K _philips

PHP112N06T
PHP112N06T

PHP/PHB110NQ08LTN-channel TrenchMOS logic level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies

9.4. php110nq08t phb110nq08t.pdf Size:89K _philips

PHP112N06T
PHP112N06T

PHP/PHB110NQ08TN-channel TrenchMOS standard level FETRev. 01 29 March 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies D

 9.5. phb119nq06t php119nq06t.pdf Size:92K _philips

PHP112N06T
PHP112N06T

PHP/PHB119NQ06TN-channel TrenchMOS standard level FETRev. 01 05 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS technology.1.2 Features Standard level threshold Very low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-DC

9.6. php110nq06lt phb110nq06lt.pdf Size:94K _philips

PHP112N06T
PHP112N06T

PHP/PHB110NQ06LTN-channel TrenchMOS logic level FETRev. 01 04 May 2004 Product data1. Product profile1.1 DescriptionLogic level N-channel enhancement mode field-effect transistor in a plastic packageusing TrenchMOS technology.1.2 Features Logic level threshold Low on-state resistance.1.3 Applications Motors, lamps, solenoids Uninterruptible power supplies DC-to-D

9.7. php11n50e phb11n50e phw11n50e.pdf Size:35K _philips

PHP112N06T
PHP112N06T

Philips Semiconductors Preliminary specification PowerMOS transistors PHP11N50E, PHB11N50E, PHW11N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 10.4 Ag Low thermal resistanceRDS(ON) 0.6 sGENERAL DESCRIPTI

9.8. php110nq08t.pdf Size:315K _philips

PHP112N06T
PHP112N06T

PHP110NQ08TN-channel TrenchMOS standard level FETRev. 02 12 October 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 F

9.9. php110nq06lt.pdf Size:211K _philips

PHP112N06T
PHP112N06T

PHP110NQ06LTN-channel TrenchMOS logic level FETRev. 02 4 March 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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