PHX23NQ11T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHX23NQ11T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 41.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 110 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO-220F
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PHX23NQ11T Datasheet (PDF)
phx23nq11t.pdf
PHX23NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qu
phx23nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switchingID = 13 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno
phx23nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switchingID = 13 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno
Otros transistores... PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , STP65NF06 , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T , PHX9NQ20T , PJD1NA50 , PJD1NA60 , PJD1NA60A , PJD1NA80 .
History: PHX27NQ11T
History: PHX27NQ11T
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