PHX23NQ11T Datasheet and Replacement
Type Designator: PHX23NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-220F
PHX23NQ11T substitution
PHX23NQ11T Datasheet (PDF)
phx23nq11t.pdf
PHX23NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qu
phx23nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switchingID = 13 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno
phx23nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switchingID = 13 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno
Datasheet: PHU78NQ03LT , PHW7N60 , PHW80NQ10T , PHX14NQ20T , PHX18NQ11T , PHX18NQ20T , PHX20N06T , PHX23NQ10T , IRFZ48N , PHX27NQ11T , PHX45NQ11T , PHX8NQ11T , PHX9NQ20T , PJD1NA50 , PJD1NA60 , PJD1NA60A , PJD1NA80 .
History: SFF440 | SIHF9530S | AP9973GJ-HF
Keywords - PHX23NQ11T MOSFET datasheet
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History: SFF440 | SIHF9530S | AP9973GJ-HF
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