PHX23NQ11T MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX23NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 41.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-220F
PHX23NQ11T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX23NQ11T Datasheet (PDF)
phx23nq11t.pdf
PHX23NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qu
phx23nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switchingID = 13 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno
phx23nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10TFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switchingID = 13 AgRDS(ON) 70 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: STP5N80
History: STP5N80
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