PHX23NQ11T Datasheet. Specs and Replacement
Type Designator: PHX23NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 41.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-220F
PHX23NQ11T substitution
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PHX23NQ11T datasheet
phx23nq11t.pdf
PHX23NQ11T N-channel TrenchMOS standard level FET Rev. 01 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Isolated package. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Qu... See More ⇒
phx23nq10t 1.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching ID = 13 A g RDS(ON) 70 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno... See More ⇒
phx23nq10t.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PHX23NQ10T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching ID = 13 A g RDS(ON) 70 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using trench techno... See More ⇒
Detailed specifications: PHU78NQ03LT, PHW7N60, PHW80NQ10T, PHX14NQ20T, PHX18NQ11T, PHX18NQ20T, PHX20N06T, PHX23NQ10T, STP65NF06, PHX27NQ11T, PHX45NQ11T, PHX8NQ11T, PHX9NQ20T, PJD1NA50, PJD1NA60, PJD1NA60A, PJD1NA80
Keywords - PHX23NQ11T MOSFET specs
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