PHX8NQ11T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PHX8NQ11T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 110 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: TO-220F

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PHX8NQ11T datasheet

 ..1. Size:90K  philips
 phx8nq11t.pdf pdf_icon

PHX8NQ11T

PHX8NQ11T N-channel TrenchMOS standard level FET Rev. 01 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS technology. 1.2 Features Low on-state resistance Isolated package. 1.3 Applications DC-to-DC converters Switched-mode power supplies. 1.4 Qui

 9.1. Size:61K  philips
 phx8nd50e 2.pdf pdf_icon

PHX8NQ11T

Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 4.2 A High thermal cycling performance g Isolated package RDS(ON) 0.85 Fast reverse recovery diode trr = 180 n

 9.2. Size:74K  philips
 phx8n50e.pdf pdf_icon

PHX8NQ11T

Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 A g Isolated package RDS(ON) 0.85 s GENERAL DESCRIPTION PINNING SOT186A N-channel, en

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