PHX8NQ11T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PHX8NQ11T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 110 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: TO-220F
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PHX8NQ11T Datasheet (PDF)
phx8nq11t.pdf

PHX8NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qui
phx8nd50e 2.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 4.2 A High thermal cycling performanceg Isolated package RDS(ON) 0.85 Fast reverse recovery diodetrr = 180 n
phx8n50e.pdf

Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 Ag Isolated packageRDS(ON) 0.85 sGENERAL DESCRIPTION PINNING SOT186AN-channel, en
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History: FRS9240R | FDC645NF095 | IRFPS30N60KPBF | PHK28NQ03LT | BRB7N65 | NCE3090K | 2SK2084STL-E
History: FRS9240R | FDC645NF095 | IRFPS30N60KPBF | PHK28NQ03LT | BRB7N65 | NCE3090K | 2SK2084STL-E



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