PHX8NQ11T
MOSFET. Datasheet pdf. Equivalent
Type Designator: PHX8NQ11T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 7.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 23
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO-220F
PHX8NQ11T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PHX8NQ11T
Datasheet (PDF)
..1. Size:90K philips
phx8nq11t.pdf 
PHX8NQ11TN-channel TrenchMOS standard level FETRev. 01 14 May 2004 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect transistor in a fully isolated encapsulatedplastic package using TrenchMOS technology.1.2 Features Low on-state resistance Isolated package.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4 Qui
9.1. Size:61K philips
phx8nd50e 2.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX8ND50E FREDFET, Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 4.2 A High thermal cycling performanceg Isolated package RDS(ON) 0.85 Fast reverse recovery diodetrr = 180 n
9.2. Size:74K philips
phx8n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHX8N50E Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 4.2 Ag Isolated packageRDS(ON) 0.85 sGENERAL DESCRIPTION PINNING SOT186AN-channel, en
Datasheet: WPB4002
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