IRFS9N60A Todos los transistores

 

IRFS9N60A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFS9N60A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO263
 

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IRFS9N60A Datasheet (PDF)

 ..1. Size:232K  international rectifier
irfs9n60apbf.pdf pdf_icon

IRFS9N60A

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 ..2. Size:270K  international rectifier
irfs9n60a.pdf pdf_icon

IRFS9N60A

PD - 95538SMPS MOSFETIRFS9N60APbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 600V 0.75 9.2Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt RuggednessG D Sl Fully Characterized Capacitance an

 ..3. Size:225K  vishay
irfs9n60a sihfs9n60a.pdf pdf_icon

IRFS9N60A

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

 ..4. Size:278K  inchange semiconductor
irfs9n60a.pdf pdf_icon

IRFS9N60A

iscN-Channel MOSFET Transistor IRFS9N60AFEATURESLow drain-source on-resistance:RDS(ON) =0.75 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... IRFS9630 , IRFS9631 , IRFS9632 , IRFS9633 , IRFS9640 , IRFS9641 , IRFS9642 , IRFS9643 , 5N60 , IRFSL11N50A , IRFSL9N60A , IRFSZ14A , IRFSZ20 , IRFSZ22 , IRFSZ24 , IRFSZ24A , IRFSZ25 .

History: NP32N055HDE | MPSD60M370 | FQD4N25TM | SVG103R0NKL | HY10P10D | APT8043BFLLG | SPA04N50C3

 

 
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