IRFS9N60A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFS9N60A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 170 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO263

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IRFS9N60A datasheet

 ..1. Size:232K  international rectifier
 irfs9n60apbf.pdf pdf_icon

IRFS9N60A

PD - 95538 SMPS MOSFET IRFS9N60APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 9.2A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S l Fully Characterized Capacitance an

 ..2. Size:270K  international rectifier
 irfs9n60a.pdf pdf_icon

IRFS9N60A

PD - 95538 SMPS MOSFET IRFS9N60APbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 600V 0.75 9.2A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness G D S l Fully Characterized Capacitance an

 ..3. Size:225K  vishay
 irfs9n60a sihfs9n60a.pdf pdf_icon

IRFS9N60A

IRFS9N60A, SiHFS9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 requirement RDS(on) ( )VGS = 10 V 0.75 Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Available Fully characterized capacitance and avalanche Qgd (nC) 20 voltage and curr

 ..4. Size:278K  inchange semiconductor
 irfs9n60a.pdf pdf_icon

IRFS9N60A

iscN-Channel MOSFET Transistor IRFS9N60A FEATURES Low drain-source on-resistance RDS(ON) =0.75 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

MOSTRAR MÁS

Otros transistores... IRFS9630, IRFS9631, IRFS9632, IRFS9633, IRFS9640, IRFS9641, IRFS9642, IRFS9643, IRLB4132, IRFSL11N50A, IRFSL9N60A, IRFSZ14A, IRFSZ20, IRFSZ22, IRFSZ24, IRFSZ24A, IRFSZ25