SFI9540 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFI9540  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 132 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 240 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: D2PAK

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SFI9540 datasheet

 ..1. Size:503K  samsung
 sfi9540.pdf pdf_icon

SFI9540

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -17 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.161 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolut

 9.1. Size:230K  fairchild semi
 sfi9510 sfw9510.pdf pdf_icon

SFI9540

SFW/I9510 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -3.6 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.912 (Typ.) 1 1 2 3 3 1. Gate

 9.2. Size:228K  fairchild semi
 sfw9520 sfi9520.pdf pdf_icon

SFI9540

SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6.0 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.444 (Typ.) 1 1 2 3 3 1. Gat

 9.3. Size:210K  samsung
 sfi9530.pdf pdf_icon

SFI9540

SFW/I9530 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.225 (Typ.) 1 1 2 3 3 1. Gate 2.

MOSTRAR MÁS

Otros transistores... SFF9250L, SFFC40-28, SFFC50, SFFC50M, SFFC50Z, SFFX054M, SFFX054Z, SFH9250L, RFP50N06, SFL024, SFL044J, SFL3200, SFM9014TF, SFM9110TF, SFP12N65, SFP13N50, SFP3710G