SFR9024TM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFR9024TM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: DPAK

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SFR9024TM datasheet

 ..1. Size:228K  fairchild semi
 sfr9024tm.pdf pdf_icon

SFR9024TM

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -7.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Ma

 7.1. Size:230K  fairchild semi
 sfu9024 sfr9024.pdf pdf_icon

SFR9024TM

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -7.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Ma

 7.2. Size:214K  samsung
 sfr9024.pdf pdf_icon

SFR9024TM

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = -7.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -60V Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.1. Size:238K  fairchild semi
 sfu9034 sfr9034.pdf pdf_icon

SFR9024TM

SFR/U9034 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol

MOSTRAR MÁS

Otros transistores... SFP740, SFP75N08R, SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, SFR9014TF, RU7088R, SFR9034TF, SFR9110TF, SFT1452, SFT210DE, SFT6661, SFW9530TM, SFW9640TM, SFW9Z34TM