SFR9024TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFR9024TM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 32 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 15 nC
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET SFR9024TM
SFR9024TM Datasheet (PDF)
sfr9024tm.pdf
SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma
sfu9024 sfr9024.pdf
SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma
sfr9024.pdf
SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum
sfu9034 sfr9034.pdf
SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol
sfr9034tf.pdf
SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol
sfu9014 sfr9014.pdf
SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max
sfr9014tf.pdf
SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max
sfr9034.pdf
Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
sfr9014.pdf
Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DMN3730UFB4
History: DMN3730UFB4
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918