SFR9024TM Todos los transistores

 

SFR9024TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFR9024TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 32 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 7.8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 21 nS
   Conductancia de drenaje-sustrato (Cd): 140 pF
   Resistencia entre drenaje y fuente RDS(on): 0.28 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET SFR9024TM

 

SFR9024TM Datasheet (PDF)

 ..1. Size:228K  fairchild semi
sfr9024tm.pdf

SFR9024TM
SFR9024TM

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

 7.1. Size:230K  fairchild semi
sfu9024 sfr9024.pdf

SFR9024TM
SFR9024TM

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

 7.2. Size:214K  samsung
sfr9024.pdf

SFR9024TM
SFR9024TM

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:238K  fairchild semi
sfu9034 sfr9034.pdf

SFR9024TM
SFR9024TM

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

 9.2. Size:235K  fairchild semi
sfr9034tf.pdf

SFR9024TM
SFR9024TM

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

 9.3. Size:229K  fairchild semi
sfu9014 sfr9014.pdf

SFR9024TM
SFR9024TM

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 9.4. Size:226K  fairchild semi
sfr9014tf.pdf

SFR9024TM
SFR9024TM

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

 9.5. Size:504K  samsung
sfr9034.pdf

SFR9024TM
SFR9024TM

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 9.6. Size:495K  samsung
sfr9014.pdf

SFR9024TM
SFR9024TM

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

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