SFR9024TM Datasheet. Specs and Replacement

Type Designator: SFR9024TM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: DPAK

SFR9024TM substitution

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SFR9024TM datasheet

 ..1. Size:228K  fairchild semi
sfr9024tm.pdf pdf_icon

SFR9024TM

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -7.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Ma... See More ⇒

 7.1. Size:230K  fairchild semi
sfu9024 sfr9024.pdf pdf_icon

SFR9024TM

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -7.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Ma... See More ⇒

 7.2. Size:214K  samsung
sfr9024.pdf pdf_icon

SFR9024TM

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input Capacitance ID = -7.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -60V Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum ... See More ⇒

 9.1. Size:238K  fairchild semi
sfu9034 sfr9034.pdf pdf_icon

SFR9024TM

SFR/U9034 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol... See More ⇒

Detailed specifications: SFP740, SFP75N08R, SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, SFR9014TF, RU7088R, SFR9034TF, SFR9110TF, SFT1452, SFT210DE, SFT6661, SFW9530TM, SFW9640TM, SFW9Z34TM

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.