All MOSFET. SFR9024TM Datasheet

 

SFR9024TM Datasheet and Replacement


   Type Designator: SFR9024TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: DPAK
 

 SFR9024TM substitution

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SFR9024TM Datasheet (PDF)

 ..1. Size:228K  fairchild semi
sfr9024tm.pdf pdf_icon

SFR9024TM

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

 7.1. Size:230K  fairchild semi
sfu9024 sfr9024.pdf pdf_icon

SFR9024TM

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

 7.2. Size:214K  samsung
sfr9024.pdf pdf_icon

SFR9024TM

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:238K  fairchild semi
sfu9034 sfr9034.pdf pdf_icon

SFR9024TM

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

Datasheet: SFP740 , SFP75N08R , SFP830 , SFP830D , SFP840 , SFP9640L , SFP9N50 , SFR9014TF , MMD60R360PRH , SFR9034TF , SFR9110TF , SFT1452 , SFT210DE , SFT6661 , SFW9530TM , SFW9640TM , SFW9Z34TM .

History: IRHQ567110 | WMO07N100C2 | NTBV45N06

Keywords - SFR9024TM MOSFET datasheet

 SFR9024TM cross reference
 SFR9024TM equivalent finder
 SFR9024TM lookup
 SFR9024TM substitution
 SFR9024TM replacement

 

 
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