SFR9034TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

..1. Size:235K fairchild semi
sfr9034tf.pdf pdf_icon

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

7.1. Size:238K fairchild semi
sfu9034 sfr9034.pdf pdf_icon

SFR/U9034Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsol

7.2. Size:504K samsung
sfr9034.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = -14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.106 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

9.1. Size:230K fairchild semi
sfu9024 sfr9024.pdf pdf_icon

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

9.2. Size:229K fairchild semi
sfu9014 sfr9014.pdf pdf_icon

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

9.3. Size:226K fairchild semi
sfr9014tf.pdf pdf_icon

SFR/U9014Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -5.3 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Max

9.4. Size:228K fairchild semi
sfr9024tm.pdf pdf_icon

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 Vn Avalanche Rugged TechnologyRDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -7.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -60Vn Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Ma

9.5. Size:214K samsung
sfr9024.pdf pdf_icon

SFR/U9024Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = -7.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.206 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

9.6. Size:495K samsung
sfr9014.pdf pdf_icon

Advanced Power MOSFETFEATURESBVDSS = -60 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

SFR9034TF Datasheet (PDF)

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