SFR9034TF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFR9034TF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 49 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 265 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: DPAK

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SFR9034TF datasheet

 ..1. Size:235K  fairchild semi
 sfr9034tf.pdf pdf_icon

SFR9034TF

SFR/U9034 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol

 7.1. Size:238K  fairchild semi
 sfu9034 sfr9034.pdf pdf_icon

SFR9034TF

SFR/U9034 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol

 7.2. Size:504K  samsung
 sfr9034.pdf pdf_icon

SFR9034TF

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.1. Size:230K  fairchild semi
 sfu9024 sfr9024.pdf pdf_icon

SFR9034TF

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.28 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -7.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.206 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Ma

MOSTRAR MÁS

Otros transistores... SFP75N08R, SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, SFR9014TF, SFR9024TM, MMIS60R580P, SFR9110TF, SFT1452, SFT210DE, SFT6661, SFW9530TM, SFW9640TM, SFW9Z34TM, SQM100N04-2M7