SFW9530TM Datasheet. Equivalente

 ..1. Size:233K  fairchild semi
 sfw9530tm.pdf

SFW/I9530 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -10.5 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.225 (Typ.) 1 1 2 3 3 1. Ga

 7.1. Size:504K  samsung
 sfw9530.pdf

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.225 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol

 9.1. Size:230K  fairchild semi
 sfi9510 sfw9510.pdf

SFW/I9510 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -3.6 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.912 (Typ.) 1 1 2 3 3 1. Gate

 9.2. Size:201K  fairchild semi
 sfw9540.pdf

SFW/I9540 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -17 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.161 (Typ.) 1 1 2 3 3 1. Gat

 9.3. Size:228K  fairchild semi
 sfw9520 sfi9520.pdf

SFW/I9520 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -6.0 A n Improved Gate Charge n Extended Safe Operating Area D2-PAK I2-PAK n 175oC Operating Temperature 2 n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Low RDS(ON) 0.444 (Typ.) 1 1 2 3 3 1. Gat

 9.4. Size:499K  samsung
 sfw9520.pdf

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.0 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.444 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolu

 9.5. Size:507K  samsung
 sfw9540.pdf

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -17 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.161 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolut

 9.6. Size:502K  samsung
 sfw9510.pdf

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.6 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature 2 Lower Leakage Current 10 A (Max.) @ VDS = -100V Low RDS(ON) 0.912 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolu