SFW9640TM Todos los transistores

 

SFW9640TM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFW9640TM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 123 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 207 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: D2PAK
 

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SFW9640TM Datasheet (PDF)

 ..1. Size:259K  fairchild semi
 sfw9640tm.pdf pdf_icon

SFW9640TM

SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 7.1. Size:264K  fairchild semi
 sfi9640 sfw9640.pdf pdf_icon

SFW9640TM

SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 7.2. Size:506K  samsung
 sfw9640.pdf pdf_icon

SFW9640TM

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 8.1. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFW9640TM

SFW/I9644Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.549 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

MOSTRAR MÁS

Otros transistores... SFR9014TF , SFR9024TM , SFR9034TF , SFR9110TF , SFT1452 , SFT210DE , SFT6661 , SFW9530TM , BS170 , SFW9Z34TM , SQM100N04-2M7 , SQM100N04-3M5 , SQM100N10-10 , SQM110N04-02L , SQM110N04-03 , SQM110N04-03L , SQM110N04-04 .

History: STFI9N60M2 | TK100A08N1 | SE100P60 | IRFS7540 | STP26NM60ND | SI12N60-F | LU120N

 

 
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