All MOSFET. SFW9640TM Datasheet

 

SFW9640TM Datasheet and Replacement


   Type Designator: SFW9640TM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 123 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 207 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: D2PAK
 

 SFW9640TM substitution

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SFW9640TM Datasheet (PDF)

 ..1. Size:259K  fairchild semi
 sfw9640tm.pdf pdf_icon

SFW9640TM

SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 7.1. Size:264K  fairchild semi
 sfi9640 sfw9640.pdf pdf_icon

SFW9640TM

SFW/I9640Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 7.2. Size:506K  samsung
 sfw9640.pdf pdf_icon

SFW9640TM

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.344 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 8.1. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFW9640TM

SFW/I9644Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 0.549 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

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Datasheet: SFR9014TF , SFR9024TM , SFR9034TF , SFR9110TF , SFT1452 , SFT210DE , SFT6661 , SFW9530TM , BS170 , SFW9Z34TM , SQM100N04-2M7 , SQM100N04-3M5 , SQM100N10-10 , SQM110N04-02L , SQM110N04-03 , SQM110N04-03L , SQM110N04-04 .

History: NCEP60ND30AG

Keywords - SFW9640TM MOSFET datasheet

 SFW9640TM cross reference
 SFW9640TM equivalent finder
 SFW9640TM lookup
 SFW9640TM substitution
 SFW9640TM replacement

 

 
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