SFW9640TM Datasheet. Specs and Replacement

Type Designator: SFW9640TM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 123 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 207 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: D2PAK

SFW9640TM substitution

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SFW9640TM datasheet

 ..1. Size:259K  fairchild semi
 sfw9640tm.pdf pdf_icon

SFW9640TM

SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒

 7.1. Size:264K  fairchild semi
 sfi9640 sfw9640.pdf pdf_icon

SFW9640TM

SFW/I9640 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒

 7.2. Size:506K  samsung
 sfw9640.pdf pdf_icon

SFW9640TM

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) 0.344 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

 8.1. Size:263K  fairchild semi
 sfi9644 sfw9644.pdf pdf_icon

SFW9640TM

SFW/I9644 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -8.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) 0.549 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximu... See More ⇒

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Detailed specifications: SFR9014TF, SFR9024TM, SFR9034TF, SFR9110TF, SFT1452, SFT210DE, SFT6661, SFW9530TM, IRF730, SFW9Z34TM, SQM100N04-2M7, SQM100N04-3M5, SQM100N10-10, SQM110N04-02L, SQM110N04-03, SQM110N04-03L, SQM110N04-04

Keywords - SFW9640TM MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.