SQM120N08-05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SQM120N08-05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 141 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 865 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SQM120N08-05

SQM120N08-05 Datasheet (PDF)

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sqm120n08-05.pdf

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sqm120n04-04.pdf

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sqm120n02-1m3l.pdf

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sqm120n03-1m5l.pdf

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sqm120n04-1m9.pdf

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sqm120n04-1m7l.pdf

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sqm120n04-2m1.pdf

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sqm120n04-03.pdf

SQM120N04-03www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0028 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 qualifiedd 100 % Rg and UIS TestedD Co

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sqm120n04-1m7.pdf

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