All MOSFET. SQM120N08-05 Datasheet

 

SQM120N08-05 Datasheet and Replacement


   Type Designator: SQM120N08-05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 865 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-263
 

 SQM120N08-05 substitution

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SQM120N08-05 Datasheet (PDF)

 ..1. Size:167K  vishay
sqm120n08-05.pdf pdf_icon

SQM120N08-05

SQM120N08-05www.vishay.comVishay SiliconixAutomotive N-Channel 75 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 75DefinitionRDS(on) () at VGS = 10 V 0.0048 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS TestedTO-263

 6.1. Size:743K  vishay
sqm120n04-04.pdf pdf_icon

SQM120N08-05

SQM120N04-04www.vishay.comVishay SiliconixAutomotive N-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 40DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETID (A) 120 Package with Low Thermal ResistanceConfiguration Single AEC-Q101 QualifieddD 100 % Rg and UIS Tested Co

 6.2. Size:748K  vishay
sqm120n02-1m3l.pdf pdf_icon

SQM120N08-05

SQM120N02-1m3Lwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 10 V 0.0013 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0017 Package with Low Thermal ResistanceID (A) 120 100 % Rg and UIS TestedConfiguration Sin

 6.3. Size:168K  vishay
sqm120n06-3m5l.pdf pdf_icon

SQM120N08-05

SQM120N06-3m5Lwww.vishay.comVishay SiliconixAutomotive N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0035 AEC-Q101 QualifieddRDS(on) () at VGS = 4.5 V 0.0039 100 % Rg and UIS TestedID (A) 120 Material categorization:Configuration Single

Datasheet: SQM120N04-1M7 , SQM120N04-1M7L , SQM120N04-1M8 , SQM120N04-1M9 , SQM120N04-2M1 , SQM120N06-04L , SQM120N06-06 , SQM120N06-3M5L , IRFP260 , SQM120N10-09 , SQM120N10-3M8 , SQM120P04-04L , SQM120P06-07L , SQM18N33-160H , SQM200N04-1M1L , SQM200N04-1M7L , SQM200N04-1M8 .

History: VBA3222 | UPA1913 | 7NM70G-TMN2-T | SVS7N60DD2TR | S85N042S | 8205B | P3606BEA

Keywords - SQM120N08-05 MOSFET datasheet

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