TK100E08N1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK100E08N1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 255 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 2100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm

Encapsulados: TO-220

 Búsqueda de reemplazo de TK100E08N1 MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK100E08N1 datasheet

 ..1. Size:247K  toshiba
 tk100e08n1.pdf pdf_icon

TK100E08N1

TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E08N1 TK100E08N1 TK100E08N1 TK100E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3)

 ..2. Size:246K  inchange semiconductor
 tk100e08n1.pdf pdf_icon

TK100E08N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E08N1 ITK100E08N1 FEATURES Low drain-source on-resistance RDS(on) 3.2m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE M

 7.1. Size:244K  toshiba
 tk100e06n1.pdf pdf_icon

TK100E08N1

TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E06N1 TK100E06N1 TK100E06N1 TK100E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3)

 7.2. Size:246K  inchange semiconductor
 tk100e06n1.pdf pdf_icon

TK100E08N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E06N1 ITK100E06N1 FEATURES Low drain-source on-resistance RDS(on) 2.3m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

MOSTRAR MÁS

Otros transistores... TJ150F04M3L, TJ15S10M3, TJ200F04M3L, TJ9A10M3, TK100A06N1, TK100A08N1, TK100A10N1, TK100E06N1, AO4407A, TK100E10N1, TK100L60W, TK100S04N1L, TK10A60W5, TK10A80E, TK10E60W, TK10J80E, TK10P60W