TK100E08N1
MOSFET. Datasheet pdf. Equivalent
Type Designator: TK100E08N1
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 255
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 130
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 2100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package:
TO-220
TK100E08N1
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK100E08N1
Datasheet (PDF)
..1. Size:247K toshiba
tk100e08n1.pdf 
TK100E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E08N1TK100E08N1TK100E08N1TK100E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
..2. Size:246K inchange semiconductor
tk100e08n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E08N1ITK100E08N1FEATURESLow drain-source on-resistance:RDS(on) 3.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
7.1. Size:244K toshiba
tk100e06n1.pdf
TK100E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E06N1TK100E06N1TK100E06N1TK100E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
7.2. Size:246K inchange semiconductor
tk100e06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E06N1ITK100E06N1FEATURESLow drain-source on-resistance:RDS(on) 2.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
8.1. Size:247K toshiba
tk100e10n1.pdf
TK100E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E10N1TK100E10N1TK100E10N1TK100E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
8.2. Size:245K inchange semiconductor
tk100e10n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E10N1ITK100E10N1FEATURESLow drain-source on-resistance:RDS(on) 3.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
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