TK100E10N1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK100E10N1  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 255 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 1500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0034 Ohm

Encapsulados: TO-220

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TK100E10N1 datasheet

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TK100E10N1

TK100E10N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E10N1 TK100E10N1 TK100E10N1 TK100E10N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.8 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 100 V) (3)

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TK100E10N1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK100E10N1 ITK100E10N1 FEATURES Low drain-source on-resistance RDS(on) 3.4m . (VGS = 10 V) Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE M

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TK100E10N1

TK100E08N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E08N1 TK100E08N1 TK100E08N1 TK100E08N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 2.6 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 80 V) (3)

 8.2. Size:244K  toshiba
 tk100e06n1.pdf pdf_icon

TK100E10N1

TK100E06N1 MOSFETs Silicon N-channel MOS (U-MOS -H) TK100E06N1 TK100E06N1 TK100E06N1 TK100E06N1 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 1.9 m (typ.) (VGS = 10 V) (2) Low leakage current IDSS = 10 A (max) (VDS = 60 V) (3)

MOSTRAR MÁS

Otros transistores... TJ15S10M3, TJ200F04M3L, TJ9A10M3, TK100A06N1, TK100A08N1, TK100A10N1, TK100E06N1, TK100E08N1, 60N06, TK100L60W, TK100S04N1L, TK10A60W5, TK10A80E, TK10E60W, TK10J80E, TK10P60W, TK10Q60W