TK100E10N1 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK100E10N1
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 255 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 140 nC
Время нарастания (tr): 32 ns
Выходная емкость (Cd): 1500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0034 Ohm
Тип корпуса: TO-220
Аналог (замена) для TK100E10N1
TK100E10N1 Datasheet (PDF)
tk100e10n1.pdf
TK100E10N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E10N1TK100E10N1TK100E10N1TK100E10N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.8 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 100 V)(3)
tk100e10n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E10N1ITK100E10N1FEATURESLow drain-source on-resistance:RDS(on) 3.4m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
tk100e08n1.pdf
TK100E08N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E08N1TK100E08N1TK100E08N1TK100E08N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 2.6 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 80 V)(3)
tk100e06n1.pdf
TK100E06N1MOSFETs Silicon N-channel MOS (U-MOS-H)TK100E06N1TK100E06N1TK100E06N1TK100E06N11. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 A (max) (VDS = 60 V)(3)
tk100e08n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E08N1ITK100E08N1FEATURESLow drain-source on-resistance:RDS(on) 3.2m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE M
tk100e06n1.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK100E06N1ITK100E06N1FEATURESLow drain-source on-resistance:RDS(on) 2.3m. (VGS = 10 V)Enhancement mode:Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
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