TK10A80E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK10A80E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-220SIS

Búsqueda de reemplazo de MOSFET TK10A80E

TK10A80E Datasheet (PDF)

..1. Size:218K toshiba
tk10a80e.pdf

TK10A80EMOSFETs Silicon N-Channel MOS (-MOS)TK10A80ETK10A80ETK10A80ETK10A80E1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.7 (typ.)(2) Low leakage current : IDSS = 10 A (max) (VDS = 640 V)(3) Enhancement mode: Vth =

..2. Size:239K inchange semiconductor
tk10a80e.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A80EITK10A80EFEATURESLow drain-source on-resistance:RDS(on) 1.0.Enhancement mode:Vth = 2.5 to4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

7.1. Size:412K toshiba
tk10a80w.pdf

TK10A80WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A80WTK10A80WTK10A80WTK10A80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan

7.2. Size:253K inchange semiconductor
tk10a80w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A80WITK10A80WFEATURESLow drain-source on-resistance: RDS(ON) = 0.46 (typ.)Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(

9.1. Size:248K toshiba
tk10a60d.pdf

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK10A60D Unit: mmSwitching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A

9.2. Size:189K toshiba
tk10a55d.pdf

TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A55D Switching Regulator Applications Unit: mm2.7 0.210 0.3 3.2 0.2 A Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth

9.3. Size:240K toshiba
tk10a60w.pdf

TK10A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A60WTK10A60WTK10A60WTK10A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

9.4. Size:238K toshiba
tk10a60w5.pdf

TK10A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK10A60W5TK10A60W5TK10A60W5TK10A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 85 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.35 (typ.) by used to Super Junction Stru

9.5. Size:245K toshiba
tk10a60d5.pdf

TK10A60D5MOSFETs Silicon N-Channel MOS (-MOS)TK10A60D5TK10A60D5TK10A60D5TK10A60D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)(3) High f

9.6. Size:197K toshiba
tk10a50d.pdf

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK10A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: Yfs = 5.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

9.7. Size:251K toshiba
tk10a50w.pdf

TK10A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A50WTK10A50WTK10A50WTK10A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

9.8. Size:253K inchange semiconductor
tk10a60d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60DITK10A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.58 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.9. Size:252K inchange semiconductor
tk10a55d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A55DITK10A55DFEATURESLow drain-source on-resistance:RDS(ON) = 0.56 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.10. Size:253K inchange semiconductor
tk10a60w.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60W, ITK10A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

9.11. Size:253K inchange semiconductor
tk10a60w5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.45Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

9.12. Size:252K inchange semiconductor
tk10a60d5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60D5ITK10A60D5FEATURESLow drain-source on-resistance:RDS(on) = 0.8 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

9.13. Size:252K inchange semiconductor
tk10a50d.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A50DITK10A50DFEATURESLow drain-source on-resistance:RDS(ON) = 0.62 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

9.14. Size:253K inchange semiconductor
tk10a50w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A50WITK10A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

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