TK10A80E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK10A80E 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 40 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO-220SIS
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TK10A80E datasheet
..1. Size:218K toshiba
tk10a80e.pdf 
TK10A80E MOSFETs Silicon N-Channel MOS ( -MOS ) TK10A80E TK10A80E TK10A80E TK10A80E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.7 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 640 V) (3) Enhancement mode Vth =
..2. Size:239K inchange semiconductor
tk10a80e.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A80E ITK10A80E FEATURES Low drain-source on-resistance RDS(on) 1.0 . Enhancement mode Vth = 2.5 to4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25
7.1. Size:412K toshiba
tk10a80w.pdf
TK10A80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A80W TK10A80W TK10A80W TK10A80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan
7.2. Size:253K inchange semiconductor
tk10a80w.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A80W ITK10A80W FEATURES Low drain-source on-resistance RDS(ON) = 0.46 (typ.) Enhancement mode Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(
9.1. Size:248K toshiba
tk10a60d.pdf
TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK10A60D Unit mm Switching Regulator Applications Low drain-source ON-resistance RDS (ON) = 0.58 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A
9.2. Size:189K toshiba
tk10a55d.pdf
TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth
9.3. Size:240K toshiba
tk10a60w.pdf
TK10A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A60W TK10A60W TK10A60W TK10A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
9.4. Size:238K toshiba
tk10a60w5.pdf
TK10A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A60W5 TK10A60W5 TK10A60W5 TK10A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 85 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.35 (typ.) by used to Super Junction Stru
9.5. Size:245K toshiba
tk10a60d5.pdf
TK10A60D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK10A60D5 TK10A60D5 TK10A60D5 TK10A60D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.8 (typ.) (3) High f
9.6. Size:197K toshiba
tk10a50d.pdf
TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.62 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
9.7. Size:251K toshiba
tk10a50w.pdf
TK10A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A50W TK10A50W TK10A50W TK10A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
9.8. Size:253K inchange semiconductor
tk10a60d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D ITK10A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.58 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS
9.9. Size:252K inchange semiconductor
tk10a55d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A55D ITK10A55D FEATURES Low drain-source on-resistance RDS(ON) = 0.56 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS
9.11. Size:253K inchange semiconductor
tk10a60w5.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.45 Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators
9.12. Size:252K inchange semiconductor
tk10a60d5.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D5 ITK10A60D5 FEATURES Low drain-source on-resistance RDS(on) = 0.8 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING
9.13. Size:252K inchange semiconductor
tk10a50d.pdf
INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A50D ITK10A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.62 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS
9.14. Size:253K inchange semiconductor
tk10a50w.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A50W ITK10A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.38 Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators
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