TK10A80E Datasheet PDF and Equivalents Search

 ..1. Size:218K  toshiba
 tk10a80e.pdf

TK10A80E MOSFETs Silicon N-Channel MOS ( -MOS ) TK10A80E TK10A80E TK10A80E TK10A80E 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.7 (typ.) (2) Low leakage current IDSS = 10 A (max) (VDS = 640 V) (3) Enhancement mode Vth =... See More ⇒

 ..2. Size:239K  inchange semiconductor
 tk10a80e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A80E ITK10A80E FEATURES Low drain-source on-resistance RDS(on) 1.0 . Enhancement mode Vth = 2.5 to4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

 7.1. Size:412K  toshiba
 tk10a80w.pdf

TK10A80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A80W TK10A80W TK10A80W TK10A80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan... See More ⇒

 7.2. Size:253K  inchange semiconductor
 tk10a80w.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A80W ITK10A80W FEATURES Low drain-source on-resistance RDS(ON) = 0.46 (typ.) Enhancement mode Vth = 3.0 to 4.0V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(... See More ⇒

 9.1. Size:248K  toshiba
 tk10a60d.pdf

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VII) TK10A60D Unit mm Switching Regulator Applications Low drain-source ON-resistance RDS (ON) = 0.58 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A... See More ⇒

 9.2. Size:189K  toshiba
 tk10a55d.pdf

TK10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A55D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON-resistance RDS (ON) = 0.56 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 550 V) Enhancement mode Vth ... See More ⇒

 9.3. Size:240K  toshiba
 tk10a60w.pdf

TK10A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A60W TK10A60W TK10A60W TK10A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 9.4. Size:238K  toshiba
 tk10a60w5.pdf

TK10A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A60W5 TK10A60W5 TK10A60W5 TK10A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 85 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.35 (typ.) by used to Super Junction Stru... See More ⇒

 9.5. Size:245K  toshiba
 tk10a60d5.pdf

TK10A60D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK10A60D5 TK10A60D5 TK10A60D5 TK10A60D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.8 (typ.) (3) High f... See More ⇒

 9.6. Size:197K  toshiba
 tk10a50d.pdf

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK10A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.62 (typ.) High forward transfer admittance Yfs = 5.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) ... See More ⇒

 9.7. Size:251K  toshiba
 tk10a50w.pdf

TK10A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10A50W TK10A50W TK10A50W TK10A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 9.8. Size:253K  inchange semiconductor
 tk10a60d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D ITK10A60D FEATURES Low drain-source on-resistance RDS(ON) = 0.58 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.9. Size:252K  inchange semiconductor
 tk10a55d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A55D ITK10A55D FEATURES Low drain-source on-resistance RDS(ON) = 0.56 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.10. Size:253K  inchange semiconductor
 tk10a60w.pdf

... See More ⇒

 9.11. Size:253K  inchange semiconductor
 tk10a60w5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.45 Easy to control Gate switching Enhancement mode Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ... See More ⇒

 9.12. Size:252K  inchange semiconductor
 tk10a60d5.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A60D5 ITK10A60D5 FEATURES Low drain-source on-resistance RDS(on) = 0.8 (typ.) Enhancement mode Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATING... See More ⇒

 9.13. Size:252K  inchange semiconductor
 tk10a50d.pdf

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK10A50D ITK10A50D FEATURES Low drain-source on-resistance RDS(ON) = 0.62 (typ.) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS... See More ⇒

 9.14. Size:253K  inchange semiconductor
 tk10a50w.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10A50W ITK10A50W FEATURES Low drain-source on-resistance RDS(ON) = 0.38 Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.5 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators... See More ⇒