TK12A60W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK12A60W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 23 nS

Cossⓘ - Capacitancia de salida: 23 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO-220SIS

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TK12A60W datasheet

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TK12A60W

TK12A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A60W TK12A60W TK12A60W TK12A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

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TK12A60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK12A60W,ITK12A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.265 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regu

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TK12A60W

TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK12A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.36 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA

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TK12A60W

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A60D Switching Regulator Applications Unit mm 2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod

MOSTRAR MÁS

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