All MOSFET. TK12A60W Datasheet

 

TK12A60W Datasheet and Replacement


   Type Designator: TK12A60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220SIS
 

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TK12A60W Datasheet (PDF)

 ..1. Size:241K  toshiba
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TK12A60W

TK12A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A60WTK12A60WTK12A60WTK12A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:253K  inchange semiconductor
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TK12A60W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A60W,ITK12A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.265 (typ.)Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regu

 7.1. Size:179K  toshiba
tk12a60u.pdf pdf_icon

TK12A60W

TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK12A60U Switching Regulator Applications Unit: mm Low drain-source ON-resistance : RDS (ON) = 0.36 (typ.) High forward transfer admittance : Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA

 7.2. Size:185K  toshiba
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TK12A60W

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A60D Switching Regulator Applications Unit: mm2.7 0.2 10 0.3 3.2 0.2 A Low drain-source ON resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement-mod

Datasheet: TK10J80E , TK10P60W , TK10Q60W , TK10V60W , TK11A65W , TK11P65W , TK11Q65W , TK11S10N1L , IRFP460 , TK12E60W , TK12J60W , TK12P60W , TK12Q60W , TK12V60W , TK14A65W , TK14A65W5 , TK14C65W .

History: ST3414A

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