TK14A65W5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK14A65W5  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO-220SIS

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TK14A65W5 datasheet

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TK14A65W5

TK14A65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK14A65W5 TK14A65W5 TK14A65W5 TK14A65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Struc

 ..2. Size:253K  inchange semiconductor
 tk14a65w5.pdf pdf_icon

TK14A65W5

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK14A65W5 ITK14A65W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.3 Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.69mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulator

 6.1. Size:238K  toshiba
 tk14a65w.pdf pdf_icon

TK14A65W5

TK14A65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK14A65W TK14A65W TK14A65W TK14A65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.22 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 6.2. Size:253K  inchange semiconductor
 tk14a65w.pdf pdf_icon

TK14A65W5

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK14A65W ITK14A65W FEATURES Low drain-source on-resistance RDS(ON) = 0.25 Easy to control Gate switching Enhancement mode Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.69mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators

MOSTRAR MÁS

Otros transistores... TK11S10N1L, TK12A60W, TK12E60W, TK12J60W, TK12P60W, TK12Q60W, TK12V60W, TK14A65W, IRFB4227, TK14C65W, TK14C65W5, TK14E65W, TK14E65W5, TK14G65W, TK14G65W5, TK14N65W, TK14N65W5