Справочник MOSFET. TK14A65W5

 

TK14A65W5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK14A65W5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO-220SIS

 Аналог (замена) для TK14A65W5

 

 

TK14A65W5 Datasheet (PDF)

 ..1. Size:234K  toshiba
 tk14a65w5.pdf

TK14A65W5 TK14A65W5

TK14A65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK14A65W5TK14A65W5TK14A65W5TK14A65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 100 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.) by using Super Junction Struc

 ..2. Size:253K  inchange semiconductor
 tk14a65w5.pdf

TK14A65W5 TK14A65W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65W5ITK14A65W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 3.0 to 4.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulator

 6.1. Size:238K  toshiba
 tk14a65w.pdf

TK14A65W5 TK14A65W5

TK14A65WMOSFETs Silicon N-Channel MOS (DTMOS)TK14A65WTK14A65WTK14A65WTK14A65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.22 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 6.2. Size:253K  inchange semiconductor
 tk14a65w.pdf

TK14A65W5 TK14A65W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A65WITK14A65WFEATURESLow drain-source on-resistance: RDS(ON) = 0.25Easy to control Gate switchingEnhancement mode: Vth = 2.5 to 3.5V (VDS = 10 V, ID=0.69mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 9.1. Size:180K  toshiba
 tk14a55d.pdf

TK14A65W5 TK14A65W5

TK14A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK14A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.31 (typ.) High forward transfer admittance: Yfs = 6.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 9.2. Size:252K  inchange semiconductor
 tk14a55d.pdf

TK14A65W5 TK14A65W5

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK14A55DITK14A55DFEATURESLow drain-source on-resistance:RDS(on) = 0.31 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS

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