TK16A60W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK16A60W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 40 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 15.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-220SIS

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TK16A60W datasheet

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TK16A60W

TK16A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W TK16A60W TK16A60W TK16A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 ..2. Size:253K  inchange semiconductor
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TK16A60W

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK16A60W, ITK16A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.16 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regul

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TK16A60W

TK16A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W5 TK16A60W5 TK16A60W5 TK16A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by using Super Junction Struc

 0.2. Size:253K  inchange semiconductor
 tk16a60w5.pdf pdf_icon

TK16A60W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16A60W5,ITK16A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.18 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Re

MOSTRAR MÁS

Otros transistores... TK14E65W5, TK14G65W, TK14G65W5, TK14N65W, TK14N65W5, TK14V65W, TK15S04N1L, TK160F10N1, AON7408, TK16A60W5, TK16C60W, TK16E60W, TK16E60W5, TK16G60W, TK16G60W5, TK16J60W, TK16J60W5