TK16A60W MOSFET Datasheet: N-Ch, 600V, 15.8A. Full specification with pinout and replacement list

TK16A60W Specs and Replacement

   Type Designator: TK16A60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 15.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220SIS

TK16A60W substitution

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TK16A60W datasheet

..1. Size:240K toshiba
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TK16A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W TK16A60W TK16A60W TK16A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.16 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En... See More ⇒

..2. Size:253K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK16A60W, ITK16A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.16 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regul... See More ⇒

0.1. Size:243K toshiba
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TK16A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK16A60W5 TK16A60W5 TK16A60W5 TK16A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 100 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.18 (typ.) by using Super Junction Struc... See More ⇒

0.2. Size:253K inchange semiconductor
tk16a60w5.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK16A60W5,ITK16A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.18 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5 V (VDS = 10 V, ID=0.79 mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Re... See More ⇒