TK20A60W5 Datasheet. Equivalente

 ..1. Size:234K  toshiba
 tk20a60w5.pdf

TK20A60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W5 TK20A60W5 TK20A60W5 TK20A60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 ..2. Size:253K  inchange semiconductor
 tk20a60w5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W5, ITK20A60W5 FEATURES Low drain-source on-resistance RDS(ON) = 0.15 (typ.) Easy to control Gate switching Enhancement mode Vth = 3.0 to 4.5V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regula

 6.1. Size:243K  toshiba
 tk20a60w.pdf

TK20A60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20A60W TK20A60W TK20A60W TK20A60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 6.2. Size:253K  inchange semiconductor
 tk20a60w.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60W, ITK20A60W FEATURES Low drain-source on-resistance RDS(ON) = 0.155 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulat

 7.1. Size:273K  toshiba
 tk20a60u.pdf

TK20A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) TK20A60U Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

 7.2. Size:205K  toshiba
 tk20a60t.pdf

TK20A60T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK20A60T Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.165 (typ.) High forward transfer admittance Yfs = 12 S (typ.) Low leakage current IDSS = 100 A (VDS = 600 V) Enhancement-mode Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute M

 7.3. Size:253K  inchange semiconductor
 tk20a60u.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK20A60U, ITK20A60U FEATURES Low drain-source on-resistance RDS(ON) = 0.165 (typ.) Low leakage current IDSS = 100 A (max) (VDS = 600 V) Enhancement mode Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION S