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TK20E60W5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK20E60W5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 165 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.175 Ohm
   Paquete / Cubierta: TO-220
 

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TK20E60W5 Datasheet (PDF)

 ..1. Size:243K  toshiba
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TK20E60W5

TK20E60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20E60W5TK20E60W5TK20E60W5TK20E60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 6.1. Size:249K  toshiba
 tk20e60w.pdf pdf_icon

TK20E60W5

TK20E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20E60WTK20E60WTK20E60WTK20E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

 7.1. Size:271K  toshiba
 tk20e60u.pdf pdf_icon

TK20E60W5

TK20E60UMOSFETs Silicon N-Channel MOS (DTMOS)TK20E60UTK20E60UTK20E60UTK20E60U1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.165 (typ.)(2) High forward transfer admittance: |Yfs| = 12 S (typ.)(3) Low leakage current: IDS

 7.2. Size:246K  inchange semiconductor
 tk20e60u.pdf pdf_icon

TK20E60W5

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK20E60UITK20E60UFEATURESLow drain-source on-resistance:RDS(on) 0.19.Enhancement mode:Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... TK17N65W , TK17V65W , TK18E10K3 , TK200F04N1L , TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , IRFP250 , TK20G60W , TK20J60W , TK20J60W5 , TK20N60W , TK20N60W5 , TK20V60W , TK20V60W5 , TK22A10N1 .

History: HTD2K1P10 | PTP13N50B

 

 
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