TK20N60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK20N60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 165 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 40 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm
Paquete / Cubierta: TO-247
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Otros transistores... TK20A60W , TK20A60W5 , TK20C60W , TK20E60W , TK20E60W5 , TK20G60W , TK20J60W , TK20J60W5 , AO4407 , TK20N60W5 , TK20V60W , TK20V60W5 , TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 , TK25E60X .
History: CPH6311 | INK0103AM1
History: CPH6311 | INK0103AM1
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