TK20N60W Todos los transistores

 ..1. Size:245K  toshiba
 tk20n60w.pdf

TK20N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK20N60W TK20N60W TK20N60W TK20N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.13 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 0.1. Size:239K  toshiba
 tk20n60w5.pdf

TK20N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK20N60W5 TK20N60W5 TK20N60W5 TK20N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 110 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.15 (typ.) by used to Super Junction Str

 9.1. Size:917K  st
 stk20n75f3.pdf

STK20N75F3 N-channel 75 V, 0.0065 , 20 A, PolarPAK STripFET Power MOSFET Features VDSS RDS(on) max Type STK20N75F3 75 V

 9.2. Size:129K  ixys
 ixtk20n150 ixtx20n150.pdf

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on)

 9.3. Size:425K  first silicon
 ftk20n06d.pdf

SEMICONDUCTOR FTK20N06D TECHNICAL DATA N-Channel Power MOSFET A I C J GENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2 provide excellent RDS(ON) with low gate charge. B 5 60 0 2 C 5 20 0 2 It can be used in awide variety of applications. D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 MAX I 2 30 0