TK20N60W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

TK20N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK20N60WTK20N60WTK20N60WTK20N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.13 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

TK20N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK20N60W5TK20N60W5TK20N60W5TK20N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 110 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.15 (typ.) by used to Super Junction Str

STK20N75F3N-channel 75 V, 0.0065 , 20 A, PolarPAKSTripFET Power MOSFETFeaturesVDSS RDS(on) maxTypeSTK20N75F3 75 V

High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)

SEMICONDUCTORFTK20N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0