TK20N60W MOSFET. Datasheet pdf. Equivalent
Type Designator: TK20N60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: TO-247
TK20N60W Transistor Equivalent Substitute - MOSFET Cross-Reference Search
TK20N60W Datasheet (PDF)
tk20n60w.pdf
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tk20n60w5.pdf
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stk20n75f3.pdf
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ftk20n06d.pdf
SEMICONDUCTORFTK20N06DTECHNICAL DATAN-Channel Power MOSFET AICJGENERAL DESCRIPTION The FTK20N06D uses advanced trench technology and design to DIM MILLIMETERS A 6 50 0 2provide excellent RDS(ON) with low gate charge. B 5 60 0 2C 5 20 0 2It can be used in awide variety of applications. D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00 MAX I 2 30 0
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
