TK25E60X5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK25E60X5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 60 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: TO-220

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TK25E60X5 Datasheet (PDF)

..1. Size:373K toshiba
tk25e60x5.pdf

TK25E60X5MOSFETs Silicon N-Channel MOS (DTMOS-H)TK25E60X5TK25E60X5TK25E60X5TK25E60X51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 120 ns(typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.12 (typ.)(3) Easy to control Gate switc

..2. Size:246K inchange semiconductor
tk25e60x5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25E60X5ITK25E60X5FEATURESLow drain-source on-resistance:RDS(on) 0.14.Enhancement mode:Vth =3.0 to 4.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T

6.1. Size:247K toshiba
tk25e60x.pdf

TK25E60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK25E60XTK25E60XTK25E60XTK25E60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.105 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

6.2. Size:246K inchange semiconductor
tk25e60x.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK25E60XITK25E60XFEATURESLow drain-source on-resistance:RDS(on) 0.125.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

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