TK25E60X5 datasheet, аналоги, основные параметры

Наименование производителя: TK25E60X5  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 180 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 60 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm

Тип корпуса: TO-220

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Аналог (замена) для TK25E60X5

- подборⓘ MOSFET транзистора по параметрам

 

TK25E60X5 даташит

 ..1. Size:373K  toshiba
 tk25e60x5.pdf pdf_icon

TK25E60X5

TK25E60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25E60X5 TK25E60X5 TK25E60X5 TK25E60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc

 ..2. Size:246K  inchange semiconductor
 tk25e60x5.pdf pdf_icon

TK25E60X5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25E60X5 ITK25E60X5 FEATURES Low drain-source on-resistance RDS(on) 0.14 . Enhancement mode Vth =3.0 to 4.5V (VDS = 10 V, ID=1.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T

 6.1. Size:247K  toshiba
 tk25e60x.pdf pdf_icon

TK25E60X5

TK25E60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25E60X TK25E60X TK25E60X TK25E60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

 6.2. Size:246K  inchange semiconductor
 tk25e60x.pdf pdf_icon

TK25E60X5

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK25E60X ITK25E60X FEATURES Low drain-source on-resistance RDS(on) 0.125 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =

ПОКАЗАТЬ ЕЩЁ

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