TK25N60X5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK25N60X5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de TK25N60X5 MOSFET
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TK25N60X5 datasheet
tk25n60x5.pdf
TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25N60X5 TK25N60X5 TK25N60X5 TK25N60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc
tk25n60x.pdf
TK25N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25N60X TK25N60X TK25N60X TK25N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit
ftk25n03pdfn33.pdf
SEMICONDUCTOR FTK25N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET PDFN3.3 3.3-8L-A DESCRIPTION The FTK25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good he
Otros transistores... TK20V60W5 , TK22A10N1 , TK22E10N1 , TK25A60X , TK25A60X5 , TK25E60X , TK25E60X5 , TK25N60X , 18N50 , TK25S06N1L , TK25V60X , TK25V60X5 , TK28A65W , TK28E65W , TK28N65W , TK28N65W5 , TK28V65W .
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