TK25N60X5 Datasheet. Specs and Replacement
Type Designator: TK25N60X5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-247
TK25N60X5 substitution
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TK25N60X5 datasheet
tk25n60x5.pdf
TK25N60X5 MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25N60X5 TK25N60X5 TK25N60X5 TK25N60X5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 120 ns(typ.) (2) Low drain-source on-resistance RDS(ON) = 0.12 (typ.) (3) Easy to control Gate switc... See More ⇒
tk25n60x.pdf
TK25N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK25N60X TK25N60X TK25N60X TK25N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.105 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit... See More ⇒
ftk25n03pdfn33.pdf
SEMICONDUCTOR FTK25N03PDFN33 TECHNICAL DATA N-Channel Power MOSFET PDFN3.3 3.3-8L-A DESCRIPTION The FTK25N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Battery switch Good stability and uniformity with high EAS Load switch Excellent package for good he... See More ⇒
Detailed specifications: TK20V60W5, TK22A10N1, TK22E10N1, TK25A60X, TK25A60X5, TK25E60X, TK25E60X5, TK25N60X, 18N50, TK25S06N1L, TK25V60X, TK25V60X5, TK28A65W, TK28E65W, TK28N65W, TK28N65W5, TK28V65W
Keywords - TK25N60X5 MOSFET specs
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