TK31E60W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK31E60W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 230 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 30.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
Encapsulados: TO-220
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TK31E60W datasheet
tk31e60w.pdf
TK31E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31E60W TK31E60W TK31E60W TK31E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
tk31e60w.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK31E60W ITK31E60W FEATURES Low drain-source on-resistance RDS(on) 0.088 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=1.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T
tk31e60x.pdf
TK31E60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31E60X TK31E60X TK31E60X TK31E60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit
Otros transistores... TK28E65W , TK28N65W , TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , TK30E06N1 , TK31A60W , IRF1405 , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 .
History: SVSP65R110SHD4TR
History: SVSP65R110SHD4TR
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