TK31E60W Datasheet and Replacement
Type Designator: TK31E60W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
Package: TO-220
TK31E60W substitution
TK31E60W Datasheet (PDF)
tk31e60w.pdf

TK31E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31E60WTK31E60WTK31E60WTK31E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk31e60w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK31E60WITK31E60WFEATURESLow drain-source on-resistance:RDS(on) 0.088.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=1.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T
tk31e60x.pdf

TK31E60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31E60XTK31E60XTK31E60XTK31E60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit
Datasheet: TK28E65W , TK28N65W , TK28N65W5 , TK28V65W , TK2P90E , TK30A06N1 , TK30E06N1 , TK31A60W , NCEP15T14 , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , TK31N60W5 , TK31N60X , TK31V60W , TK31V60W5 .
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