TK31N60W5 Todos los transistores

 

TK31N60W5 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK31N60W5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 30.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm

Encapsulados: TO-247

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TK31N60W5 datasheet

 ..1. Size:244K  toshiba
 tk31n60w5.pdf pdf_icon

TK31N60W5

TK31N60W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W5 TK31N60W5 TK31N60W5 TK31N60W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 135 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.082 (typ.) by used to Super Junction St

 6.1. Size:255K  toshiba
 tk31n60w.pdf pdf_icon

TK31N60W5

TK31N60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK31N60W TK31N60W TK31N60W TK31N60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 6.2. Size:213K  inchange semiconductor
 tk31n60w.pdf pdf_icon

TK31N60W5

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor TK31N60W FEATURES With TO-247 packaging Easy to use High speed switching Very high commutation ruggedness 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

 7.1. Size:249K  toshiba
 tk31n60x.pdf pdf_icon

TK31N60W5

TK31N60X MOSFETs Silicon N-Channel MOS (DTMOS -H) TK31N60X TK31N60X TK31N60X TK31N60X 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.073 (typ.) by used to Super Junction Structure DTMOS (2) High-speed switching properties wit

MOSTRAR MÁS

Otros transistores... TK30A06N1 , TK30E06N1 , TK31A60W , TK31E60W , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , IRLB3034 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 .

 

 

 

 

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