Справочник MOSFET. TK31N60W5

 

TK31N60W5 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TK31N60W5
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 30.8 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 70 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для TK31N60W5

   - подбор ⓘ MOSFET транзистора по параметрам

 

TK31N60W5 Datasheet (PDF)

 ..1. Size:244K  toshiba
 tk31n60w5.pdf pdf_icon

TK31N60W5

TK31N60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK31N60W5TK31N60W5TK31N60W5TK31N60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 135 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.082 (typ.) by used to Super Junction St

 6.1. Size:255K  toshiba
 tk31n60w.pdf pdf_icon

TK31N60W5

TK31N60WMOSFETs Silicon N-Channel MOS (DTMOS)TK31N60WTK31N60WTK31N60WTK31N60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 6.2. Size:213K  inchange semiconductor
 tk31n60w.pdf pdf_icon

TK31N60W5

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK31N60WFEATURESWith TO-247 packagingEasy to useHigh speed switchingVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

 7.1. Size:249K  toshiba
 tk31n60x.pdf pdf_icon

TK31N60W5

TK31N60XMOSFETs Silicon N-Channel MOS (DTMOS-H)TK31N60XTK31N60XTK31N60XTK31N60X1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.073 (typ.) by used to Super Junction Structure : DTMOS(2) High-speed switching properties wit

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TK30A06N1 , TK30E06N1 , TK31A60W , TK31E60W , TK31E60X , TK31J60W , TK31J60W5 , TK31N60W , 60N06 , TK31N60X , TK31V60W , TK31V60W5 , TK31V60X , TK32A12N1 , TK32E12N1 , TK33S10N1Z , TK34A10N1 .

History: TK31V60X

 

 
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